长电科技2T1贴片三极管丝印 (晶体管)规格书,SOT-23封装,2T1三极管型号参数、外形尺寸与最小包装数量详见规格书。贴片二三极管上面的marking,市面称为：贴片代码,打字,印字,丝印等。整理发布：长电三极管授牌代理商南京南山半导体有限公司。

【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.51wendang.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

S9012 TRANSISTOR (PNP) FEATURES

z High Collector Current

z Complementary To S9013

z Excellent hFE Linearity

MARKING: 2T1

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To AmbientJunction Temperature Storage Temperature -40 -25 -5 -500 300 416 150 -55~+150V V V mA mW ℃/W℃ ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Cob Test conditions Min Typ Max Unit V V V IC=-0.1mA, IE IC=-1mA, IB IE=-0.1mA, IC VCB=-40V, IEVCE=-20V, IBVCE=-1V, IC=-50mA 5 MHz pF VEB=-5V, ICIC=-500mA, IBIC=-500mA, IBVCE=-6V,IC=-20mA, f=30MHz VCB=-10V, IE=0, f=1MHz 150

CLASSIFICATION OF hFE

RANGE

B,Nov,2011