SPN1012中文资料
N-Channel Enhancement Mode MOSFET
SPN1012
DESCRIPTION APPLICATIONS
z Drivers : Relays/Solenoids/Lamps/Hammers
The SPN1012 is the N-Channel enhancement mode
z Power Supply Converter Circuits
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density z Load/Power Switching Cell Phones, Pagers process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
FEATURES N-Channel
20V/0.65A,RDS(ON)=380m @VGS=4.5V 20V/0.55A,RDS(ON)=450m @VGS=2.5V 20V/0.45A,RDS(ON)=800m @VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-523 (SC-89) package design
PIN CONFIGURATION( SOT-523 / SC-89 )
PART MARKING
2007/01/ 02 Ver.2
Page 1
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