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BTS7960智能功率芯片中文资料

The BTS7960 is part of the NovalithIC family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a fully integrated high current half-bridge. All three chips are mounted on one common leadframe, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTS7960 can be combined with other BTS7960 to form H-bridge and 3-phase drive configurations.

BTS7960是NovalithIC家族三个独立的芯片的一部分:一是p型通道的高电位场效应晶体管，二是一个n型通道的低电位场效应晶体管，结合一个驱动晶片,形成一个完全整合的高电流半桥。所有三个芯片是安装在一个共同的引线框,利用芯片对芯片和芯片芯片技术。电源开关应用垂直场效应管技术来确保最佳的阻态。由于p型通道的高电位开关，需要一个电荷泵消除电磁干扰。通过驱动集成技术，逻辑电平输入、电流取样诊断、转换速率调整器，失效发生时间、防止欠电压、过电流、短路结构轻易地连接到一个微处理器上。BTS7960可结合其他的BTS7960形成全桥和三相驱动结构。