SPN8822中文资料

Common-Drain Dual N-Channel Enhancement Mode MOSFET

DESCRIPTION APPLICATIONS

z Power Management in Note book The SPN8822 is the Common-Drain Dual N-Channel

z Portable Equipment logic enhancement mode power field effect transistors are

z Battery Powered System produced using high cell density , DMOS trench

z DC/DC Converter technology. This high density process is especially

z Load Switch

SPN8822中文资料

tailored to minimize on-state resistance. These devices

z DSC

SPN8822中文资料

are particularly suited for low voltage application , z LCD Display inverter notebook computer power management and other battery powered circuits where high-side switching . FEATURES

20V/8.0A,RDS(ON)= 24m @VGS= 4.5V 20V/7.0A,RDS(ON)= 32m @VGS= 2.5V 20V/3.0A,RDS(ON)= 42m @VGS= 1.8V

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

TSSOP – 8P package design

PIN CONFIGURATION(SOP – 8P)

PART MARKING

SPN8822中文资料

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