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MMBTH10 TRANSISTOR (NPN) FEATURES

VHF/UHF Transistor

MARKING: 3EM

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 3 50 225 556 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=25V, IE=0 VEB=2V, IC=0 VCE=10V, IC=4mA IC=4mA, IB=0.4mA VCE=10V, IC=4mA VCE=10V,IC=4mA f=100MHz VCB=10V, IE=0, f=1MHz 650 Min 30 25 3 60 Typ Max 0.1 0.1 0.5 0.95 0.7 Unit V V V µA µA V V MHz pF

B,Apr,2012