贴片三极管2A,J3,J3Y,L6,M6,J6,PDF资料

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors

S8050 TRANSISTOR (NPN)

FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A

MARKING: J3Y

MAXIMUM RATINGS (T=25℃ unless otherwise noted)

VCBO VCEO VEBO IC PC Tj Tstg

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature

Units 40 25 5 0.5 0.3 150 -55-150

V V V A W ℃ ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current

Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1)

DC current gain

HFE(2)

Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency

VCE=1V, IC= 500mA

50

0.6 1.2

V V

Test conditions IC= 100μA, IE=0

MIN

TYP

MAX

UNIT

IC=1mA, IBIE=100μA, IC=0

VCB=40 V , IEμA VCB=20V , IEμA VEB= 5V , ICμA VCE=1V, IC= 50mA

120

350

VCEC=500 mA, IB= 50mA VBEC=500 mA, IB= 50mA fT

VCE=6V, IC= 20mA

f=30MHz

CLASSIFICATION OF hFE(1) Rank Range