FDD8424H Dual N & P-Channel PowerTrench® MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type

Min

Typ

Max

Units

Off Characteristics

BVDSS BVDSSJIDSSIGSS

Drain to Source Breakdown VoltageBreakdown Voltage TemperatureCoefficient

Zero Gate Voltage Drain CurrentGate to Source Leakage Current

ID = 250µA, VGS = 0VID = -250µA, VGS = 0V

ID = 250µA, referenced to 25°CID = -250µA, referenced to 25°CVDS = 32V, VGS = 0VVDS = -32V, VGS = 0VVGS = ±20V, VDS = 0V

Q1Q2Q1Q2Q1Q2Q1Q2

40-40

34-32

1-1±100±100

VmV/°CµAnAnA

On Characteristics

VGS(th) VGS(th)J

Gate to Source Threshold VoltageGate to Source Threshold VoltageTemperature Coefficient

VGS = VDS, ID = 250µAVGS = VDS, ID = -250µAID = 250µA, referenced to 25°CID = -250µA, referenced to 25°CVGS = 10V, ID = 9.0A VGS = 4.5V, ID = 7.0A

VGS = 10V, ID = 9.0A, TJ = 125°C VGS = -10V, ID = -6.5A VGS = -4.5V, ID = -5.6A

VGS = -10V, ID = -6.5A, TJ = 125°C VDS = 5V, ID = 9.0AVDS = -5V, ID = -6.5A

Q1Q2Q1Q2 Q1

1-1

1.7-1.6-5.34.81923294258622913

3-3 243037547080

VmV/°C

rDS(on)

Static Drain to Source On Resistancem

Q2Q1Q2

gFS

Forward TransconductanceS

Dynamic Characteristics

CissCossCrssRg

Input CapacitanceOutput Capacitance

Reverse Transfer CapacitanceGate Resistance

Q1

VDS = 20V, VGS = 0V, f = 1MHZQ2

VDS = -20V, VGS = 0V, f = 1MHZf = 1MHz

Q1Q2Q1Q2Q1Q2Q1Q2

750100011514075751.13.3

10001330155185115115

pFpFpF

Switching Characteristics

td(on)trtd(off)tfQg(TOT)QgsQgd

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Total Gate Charge Gate to Source ChargeGate to Drain “Miller” Charge

Q1

VDD = 20V, ID = 9.0A, VGS = 10V, RGEN = 6 Q2

VDD = -20V, ID = -6.5A, VGS = -10V, RGEN = 6

Q1

VGS = 10V, VDD = 20V, ID = 9.0A Q2

VGS = -10V, VDD = -20V, ID = -6.5A

Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2Q1Q2

7713317206314172.33.03.23.6

14142410313612102024

nsnsnsnsnCnCnC

©2007 Fairchild Semiconductor CorporationFDD8424H Rev.C

2

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