江苏长电科技MMBTA05贴片三极管(晶体管)规格书,SOT-23封装,外形尺寸与三极管型号MMBTA05参数详见规格书。整理发布：长电三极管授牌代理商南京南山半导体有限公司。

【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.51wendang.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

(NPN) = MMBTA05 TRANSISTOR

=FEATURES

Driver transistor

MARKING :1H

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) VCBO

VCEO

VEBO

IC

PC

TJ

Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 60 60 4 0.5 300 150 -55-150 V V V A mW ℃ ℃ =SOT-23 Plastic-Encapsulate Transistors ==ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage Collector cut-off current

Collector cut-off current

Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO

ICBO ICEO IEBO

hFE1

DC current gain

hFE2

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency VCE=1V, IC Test conditions IC= 100μA, IE=0 Min TypMIC= 1mA, IB

IE=100μA, IC=0 VCB=60V, IEμA VCE=60V, IBμA VEB=3V, ICμA VCE=1V, IC= 10mA 100 400 VCE(sat) C=100mA, IBVBE fT VCE=1V, IC= 100mA VCE= 2V, IC=10mA 1.2 V

f=100MHz

B,Feb,2013