江苏长电科技MMBTA43贴片三极管(晶体管)规格书,SOT-23封装,外形尺寸与三极管型号MMBTA43参数详见规格书。整理发布：长电三极管授牌代理商南京南山半导体有限公司。

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MMBTA43 TRANSISTOR (NPN) FEATURES

High Voltage Application

Telephone Application

Complementary to MMBTA93

MARKING:ABX MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 200 5 500 350 357 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO Test conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 Min 200 200 5 40 40 40 50 Typ Max 0.5 0.9 4 Unit V V V V V MHz pF hFE(1)* VCE=10V, IC=10mA hFE(2)* VCE=10V, IC=1mA hFE(3)* VCE=10V, IC=30mA VCE(sat)* IC=20mA, IB=2mA VBE(sat)* fT Cob IC=20mA, IB=2mA VCE=20V,IE=10mA, f=100MHz VCB=20V, IE=0, f=1MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

A,Oct,2010