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NAND128-A, NAND256-ANAND512-A, NAND01G-A

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)

528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

FEATURES SUMMARY

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HIGH DENSITY NAND FLASH MEMORIES–––

Up to 1 Gbit memory arrayUp to 32 Mbit spare area

Cost effective solutions for mass storage applicationsx8 or x16 bus widthMultiplexed Address/ DataPinout compatibility for all densities1.8V device: VDD = 1.7 to 1.95V3.0V device: VDD = 2.7 to 3.6Vx8 device: (512 + 16 spare) Bytesx16 device: (256 + 8 spare) Wordsx8 device: (16K + 512 spare) Bytesx16 device: (8K + 256 spare) WordsRandom access: 12µs (max)Sequential access: 50ns (min)Page program time: 200µs (typ)

Fast page copy without external buffering

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NAND INTERFACE–––

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SUPPLY VOLTAGE––

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PAGE SIZE––

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BLOCK SIZE––

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PAGE READ / PROGRAM–––

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DATA INTEGRITY––

100,000 Program/Erase cycles10 years Data Retention

Lead-Free Components are Compliant with the RoHS Directive

Error Correction Code software and hardware models

Bad Blocks Management and Wear Leveling algorithms

File System OS Native reference softwareHardware simulation models

1/57

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COPY BACK PROGRAM MODE–

FAST BLOCK ERASE–

Block erase time: 2ms (Typ)

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RoHS COMPLIANCE–

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STATUS REGISTERELECTRONIC SIGNATURE

CHIP ENABLE ‘DON’T CARE’ OPTION–

Simple interface with microcontroller

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SERIAL NUMBER OPTIONHARDWARE DATA PROTECTION–

Program/Erase locked during Power transitions

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DEVELOPMENT TOOLS

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February 2005