江阴长电科技2SD1898贴片三极管(晶体管)规格书,SOT-89封装,外形尺寸与三极管型号参数详见规格书。整理发布：长电三极管授牌代理商南京南山半导体有限公司。

【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.51wendang.com

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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TRANSISTOR (NPN) =

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=SOT-89-3L Plastic-Encapsulate Transistors 2SD1898 FEATURES z High Breakdown Voltage and Current z Excellent DC Current Gain Linearity z Complement the 2SB1260

z Low Collector-Emitter Saturation Voltage

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 100 80 5 1 500 250 150 -55~+150 V V V A mW ℃/W ℃ ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol V(BR)CBO V(BR)CEOICBO IEBO hFE VCE(sat) fT Cob Test conditions Min Typ Max Unit IC=50µA,IEIC=1mA,IBV(BR)EBO IE=50µA,ICVCB=80V,IEVCE=3V, ICVCE=10V,IC=50mA, f=100MHzVCB=10V, IE=0, f=1MHz VEB=4V,ICIC=500mA,IB=20mA

100 20 pF

CLASSIFICATION OF hFE

RANGE 82–––390