江苏长电科技MMBT5401贴片三极管(晶体管)规格书,SOT-23封装,外形尺寸与三极管型号MMBT5401参数详见规格书。整理发布：长电三极管授牌代理商南京南山半导体有限公司。

【南京南山半导体有限公司 — 长电贴片三极管选型资料】www.51wendang.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

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=FEATURES

= Complementary to MMBT5551 =

= Ideal for Medium Power Amplification and Switching MMBT5401 TRANSISTOR (PNP)

MARKING: 2L

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

VCBO

VCEO

VEBO

IC

PC

RΘJA

Tj

Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature -160 -150 -5 -0.6 0.3 416 150 -55～+150V V V A W ℃/W℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * hFE(2) *

hFE(3) *

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VCE(sat)1* VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ****Test conditions Min Typ MaxUnitV V V IC=-100µA, IE IC=-1mA, IB IE=-10µA, IC VCB=-120V, IEμA VEB=-4V, ICμA VCE=-5V, IC-10mA VCE=-5V, ICVCE=-5V, ICIC=-10mA, IBIC=-50mA, IBIC=-10mA, IBIC=-50mA, IBVCE=-5V,IC=-10mA, f=30MHz 100 MHz

CLASSIFICATION OF hFE (2)

RANGE

C,Nov,2012