Advantages of an InGaN-based light emitting diode with a p-InGaNp-GaN superlattice hole accumulation

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Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice holeaccumulation layer

This article has been downloaded from IOPscience. Please scroll down to see the full text article.2013 Chinese Phys. B 22 058502

(http://www.51wendang.com/1674-1056/22/5/058502)

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